| PART |
Description |
Maker |
| AUIRF1404STRR AUIRF1404L AUIRF1404STRL |
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
HEXFET? Power MOSFET
Dynamic dV/dT Rating
|
International Rectifier
List of Unclassifed Man...
|
| HYB514400BJ-BT60 Q67100-Q749 Q67100-Q750 Q67100-Q7 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
|
SIEMENS AG
Siemens Semiconductor G...
|
| LTC3201 LTC5505-1 LTC5505-1ES5 LTC5505-2 LTC5505-2 |
RF Power Detector with Buffered Output and 40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range
RF Power Detector with Buffered Output and >40dB Dynamic Range; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C 300 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, 18 dBm INPUT POWER-MAX
|
LINER[Linear Technology]
Linear Technology, Corp.
|
| K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 9-917542-2 |
Dynamic Series Connectors; DYNAMIC D-5200S V-HDR ASSY 4P ( AMP )
|
Tyco Electronics
|
| 9-917541-2 |
Dynamic Series Connectors; DYNAMIC D-5200S H-HDR ASSY 4P ( AMP )
|
Tyco Electronics
|
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
Power Factor Correction Modules: MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| KM416V4104CS-45 KM416V4104C KM416V4004C KM416V4004 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM
From old datasheet system
1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
